32 nm process

The 32 nm node is the step following the 45 nm process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the 32 nm process in 2009. Intel and AMD produced commercial microchips using the 32-nanometre process in the early 2010s. IBM and the Common Platform also developed a 32 nm high-κ metal gate process. Intel began selling its first 32 nm processors using the Westmere architecture on 7 January 2010.

Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, nor metal pitch, nor gate pitch on a "32nm" device is thirty-two nanometers.

The 28-nanometre node was an intermediate half-node die shrink based on the 32-nanometre process.

The 32 nm process was superseded by commercial 22 nm technology in 2012.

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Semiconductor device fabrication

MOSFET scaling (process nodes)
020 µm – 1968 010 µm – 1971 006 µm – 1974 003 µm – 1977 1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics