I have a question regarding the Silvaco software. I'm aware that the conduction mechanism in memristors or RRAM devices can differ significantly from drift and diffusion models due to factors like oxygen vacancies that play a key role in the conductive filament formation. I'm curious to know if it's feasible to simulate such memristors or RRAM devices using Silvaco software to observe and analyze the resulting I-V hysteresis. I appreciate any insights you can provide. Thank you.
My anticipation was that Silvaco would provide insights into the complex interplay between oxygen vacancies and the resulting conductive filament behavior, leading to the hysteresis phenomenon observed in these devices. I was looking forward to correlating simulation results with established experimental findings to validate the accuracy of Silvaco's memristor and RRAM modeling capabilities. Feel free to adjust and customize the text to accurately reflect your experience and expectations in your simulation work.
