I have some questions regarding the flash memory with a dspic33ep512mu810. I'm aware of how it should be done: set all the register for address, latches, etc. Then do the sequence to start the write procedure or call the builtins function.
But I find that there is some small difference between what I'm experiencing and what is in the DOC.
- when writing the flash in WORD mode. In the DOC it is pretty straightforward. Following is the example code in the DOC
int varWord1L = 0xXXXX; int varWord1H = 0x00XX; int varWord2L = 0xXXXX; int varWord2H = 0x00XX; int TargetWriteAddressL; // bits<15:0> int TargetWriteAddressH; // bits<22:16> NVMCON = 0x4001; // Set WREN and word program mode TBLPAG = 0xFA; // write latch upper address NVMADR = TargetWriteAddressL; // set target write address NVMADRU = TargetWriteAddressH; __builtin_tblwtl(0,varWord1L); // load write latches __builtin_tblwth(0,varWord1H); __builtin_tblwtl(0x2,varWord2L); __builtin_tblwth(0x2,varWord2H); __builtin_disi(5); // Disable interrupts for NVM unlock sequence __builtin_write_NVM(); // initiate write while(NVMCONbits.WR == 1);
But that code doesn't work depending on the address where I want to write. I found a fix to write one WORD but I can't write 2 WORD where I want. I store everything in the aux memory so the upper address(NVMADRU) is always 0x7F for me. The NVMADR is the address I can change. What I'm seeing is that if the address where I want to write modulo 4 is not 0 then I have to put my value in the 2 last latches, otherwise I have to put the value in the first latches.
If address modulo 4 is not zero, it doesn't work like the doc code(above). The value that will be at the address will be what is in the second set of latches. I fixed it for writing only one word at a time like this:
if(Address % 4)
{
__builtin_tblwtl(0, 0xFFFF);
__builtin_tblwth(0, 0x00FF);
__builtin_tblwtl(2, ValueL);
__builtin_tblwth(2, ValueH);
}
else
{
__builtin_tblwtl(0, ValueL);
__builtin_tblwth(0, ValueH);
__builtin_tblwtl(2, 0xFFFF);
__builtin_tblwth(2, 0x00FF);
}
I want to know why I'm seeing this behavior?
2)I also want to write a full row. That also doesn't seem to work for me and I don't know why because I'm doing what is in the DOC. I tried a simple write row code and at the end I just read back the first 3 or 4 element that I wrote to see if it works:
NVMCON = 0x4002; //set for row programming
TBLPAG = 0x00FA; //set address for the write latches
NVMADRU = 0x007F; //upper address of the aux memory
NVMADR = 0xE7FA;
int latchoffset;
latchoffset = 0;
__builtin_tblwtl(latchoffset, 0);
__builtin_tblwth(latchoffset, 0); //current = 0, available = 1
latchoffset+=2;
__builtin_tblwtl(latchoffset, 1);
__builtin_tblwth(latchoffset, 1); //current = 0, available = 1
latchoffset+=2;
.
. all the way to 127(I know I could have done it in a loop)
.
__builtin_tblwtl(latchoffset, 127);
__builtin_tblwth(latchoffset, 127);
INTCON2bits.GIE = 0; //stop interrupt
__builtin_write_NVM();
while(NVMCONbits.WR == 1);
INTCON2bits.GIE = 1; //start interrupt
int testaddress;
testaddress = 0xE7FA;
status = NVMemReadIntH(testaddress);
status = NVMemReadIntL(testaddress);
testaddress += 2;
status = NVMemReadIntH(testaddress);
status = NVMemReadIntL(testaddress);
testaddress += 2;
status = NVMemReadIntH(testaddress);
status = NVMemReadIntL(testaddress);
testaddress += 2;
status = NVMemReadIntH(testaddress);
status = NVMemReadIntL(testaddress);
What I see is that the value that is stored in the address 0xE7FA is 125, in 0xE7FC is 126 and in 0xE7FE is 127. And the rest are all 0xFFFF. Why is it taking only the last 3 latches and write them in the first 3 address?
Thanks in advance for your help people.