In the datasheet of PIC18F4550 the example to write to flash program memory is the following:
MOVLW D'64’ ; number of bytes in erase block
MOVWF COUNTER
MOVLW BUFFER_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW BUFFER_ADDR_LOW
MOVWF FSR0L
MOVLW CODE_ADDR_UPPER ; Load TBLPTR with the base
MOVWF TBLPTRU ; address of the memory block
MOVLW CODE_ADDR_HIGH
MOVWF TBLPTRH
MOVLW CODE_ADDR_LOW
MOVWF TBLPTRL
READ_BLOCK
TBLRD*+ ; read into TABLAT, and inc
MOVF TABLAT, W ; get data
MOVWF POSTINC0 ; store data
DECFSZ COUNTER ; done?
BRA READ_BLOCK ; repeat
MODIFY_WORD
MOVLW DATA_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW DATA_ADDR_LOW
MOVWF FSR0L
MOVLW NEW_DATA_LOW ; update buffer word
MOVWF POSTINC0
MOVLW NEW_DATA_HIGH
MOVWF INDF0
ERASE_BLOCK
MOVLW CODE_ADDR_UPPER ; load TBLPTR with the base
MOVWF TBLPTRU ; address of the memory block
MOVLW CODE_ADDR_HIGH
MOVWF TBLPTRH
MOVLW CODE_ADDR_LOW
MOVWF TBLPTRL
BSF EECON1, EEPGD ; point to Flash program memory
BCF EECON1, CFGS ; access Flash program memory
BSF EECON1, WREN ; enable write to memory
BSF EECON1, FREE ; enable Row Erase operation
BCF INTCON, GIE ; disable interrupts
MOVLW 55h
Required MOVWF EECON2 ; write 55h
Sequence MOVLW 0AAh
MOVWF EECON2 ; write 0AAh
BSF EECON1, WR ; start erase (CPU stall)
BSF INTCON, GIE ; re-enable interrupts
TBLRD*- ; dummy read decrement
MOVLW BUFFER_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW BUFFER_ADDR_LOW
MOVWF FSR0L
MOVLW D’2’
MOVWF COUNTER1
WRITE_BUFFER_BACK
MOVLW D’32’ ; number of bytes in holding register
MOVWF COUNTER
WRITE_BYTE_TO_HREGS
MOVF POSTINC0, W ; get low byte of buffer data
MOVWF TABLAT ; present data to table latch
TBLWT+* ; write data, perform a short write
; to internal TBLWT holding register.
DECFSZ COUNTER ; loop until buffers are full
BRA WRITE_WORD_TO_HREGS
PROGRAM_MEMORY
BSF EECON1, EEPGD ; point to Flash program memory
BCF EECON1, CFGS ; access Flash program memory
BSF EECON1, WREN ; enable write to memory
BCF INTCON, GIE ; disable interrupts
MOVLW 55h
Required MOVWF EECON2 ; write 55h
Sequence MOVLW 0AAh
MOVWF EECON2 ; write 0AAh
BSF EECON1, WR ; start program (CPU stall)
DECFSZ COUNTER1
BRA WRITE_BUFFER_BACK
BSF INTCON, GIE ; re-enable interrupts
BCF EECON1, WREN ; disable write to memory
but i dont know how to interpret this code, i mean:
-in which instruction i select the location in memory to start writing
-where do i write the instructions to be written
for example, beside my main code, if i want to write in flash the next instructions after 5v are detected in some I/O of PORTB:
movlw 0CEh
movwf TRISA
what changes do i have to do in the example code of the datasheet? or am i inerpreting wrong what 'writing to flash program memory' mean?