Scandium nitride
Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation. It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV. These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods. Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.
| Names | |
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| IUPAC name
Scandium nitride | |
| Other names
Azanylidynescandium Nitridoscandium | |
| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.042.938 |
| EC Number |
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PubChem CID |
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CompTox Dashboard (EPA) |
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| Properties | |
| ScN | |
| Molar mass | 58.963 |
| Density | 4.4 g/cm3 |
| Melting point | 2,600 °C (4,710 °F; 2,870 K) |
| Hazards | |
| GHS labelling: | |
| Danger | |
| H228 | |
| Related compounds | |
Other anions |
Scandium phosphide Scandium arsenide Scandium antimonide Scandium bismuthide |
Other cations |
Yttrium nitride Lutetium nitride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references | |
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