Bis(trimethylsilyl)amine

Bis(trimethylsilyl)amine
Names
	Preferred IUPAC name 1,1,1-Trimethyl-N-(trimethylsilyl)silanamine
	Other names Bis(trimethylsilyl)azane; Bis(trimethylsilyl)amine; 1,1,1,3,3,3-Hexamethyldisilazane; Hexamethyldisilazane
Identifiers
CAS Number	999-97-3 ;
3D model (JSmol)	Interactive image; Interactive image;
Abbreviations	HMDS
Beilstein Reference	635752
ChEBI	CHEBI:85068 ;
ChemSpider	13238 ;
ECHA InfoCard	100.012.425
EC Number	213-668-5;
MeSH	Hexamethylsilazane
PubChem CID	13838; 18913873 amine; 45051731 sodium; 45051783 potassium;
RTECS number	JM9230000;
UNII	H36C68P1BH ;
UN number	2924, 3286
CompTox Dashboard (EPA)	DTXSID2025395 ;
	InChI InChI=1S/C6H19NSi2/c1-8(2,3)7-9(4,5)6/h7H,1-6H3 Key: FFUAGWLWBBFQJT-UHFFFAOYSA-N ; InChI=1/C6H19NSi2/c1-8(2,3)7-9(4,5)6/h7H,1-6H3 Key: FFUAGWLWBBFQJT-UHFFFAOYAF;
	SMILES C[Si](C)(C)N[Si](C)(C)C; N([Si](C)(C)C)[Si](C)(C)C;
Properties
Chemical formula	C6H19NSi2
Molar mass	161.395 g·mol−1
Appearance	Colorless liquid
Density	0.77 g cm−3
Melting point	−78 °C (−108 °F; 195 K)
Boiling point	126 °C (259 °F; 399 K)
Solubility in water	Slow hydrolysis
Refractive index (nD)	1.4090
Hazards
NFPA 704 (fire diamond)	3 3 1
Safety data sheet (SDS)	External MSDS
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). verify (what is ?) Infobox references

Bis(trimethylsilyl)amine (also known as hexamethyldisilazane and HMDS) is an organosilicon compound with the molecular formula [(CH₃)₃Si]₂NH. The molecule is a derivative of ammonia with trimethylsilyl groups in place of two hydrogen atoms. An electron diffraction study shows that silicon-nitrogen bond length (173.5 pm) and Si-N-Si bond angle (125.5°) to be similar to disilazane (in which methyl groups are replaced by hydrogen atoms) suggesting that steric factors are not a factor in regulating angles in this case. This colorless liquid is a reagent and a precursor to bases that are popular in organic synthesis and organometallic chemistry. Additionally, HMDS is also increasingly used as molecular precursor in chemical vapor deposition techniques to deposit silicon carbonitride thin films or coatings.

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